SiGe HBTs Optimization for Wireless Power Amplifier Applications

SiGe HBTs Optimization for Wireless Power Amplifier Applications

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This paper deals with SiGe HBTs optimization 3m speedglas 9002nc for power amplifier applications dedicated to wireless communications.In this work, we investigate the fT-BVCEO tradeoff by various collector optimization schemes such as epilayer thickness and dopant concentration, and SIC and CAP characteristics.Furthermore, a new trapezoidal base Germanium (Ge) profile is proposed.Thanks to this profile, precise control of Ge content at the here metallurgical emitter-base junction is obtained.Gain stability is obtained for a wide range of temperatures through tuning the emitter-base junction Ge percent.

Finally, a comprehensive investigation of Ge introduction into the collector (backside Ge profile) is conducted in order to improve the fT values at high injection levels.